摘要
单斜晶系氧化镓（β-Ga2O3）超宽带半导体材料具有优良的电学、光学特性以及较高的物理化学稳定性,在大功率器件、紫外探测器以及气体传感器等技术领域具有巨大的应用前景,近年来已成为国际研发的热点。概述了β-Ga2O3半导体材料的特性优势。综述了β-Ga2O3在功率半导体器件、紫外探测器、气体传感器、衬底材料以及GaN器件栅介质领域的研发和应用现状。最后,分析了β-Ga2O3材料在半导体技术领域的应用前景,指出大功率半导体器件领域和日盲深紫外探测器领域将是未来发展的重要方向。
As an ultra-wide bandgap semiconductor material, monoclinic gallium oxide （β-Ga2O3） has a huge application potential in the fields of high power devices, UV detectors and gas sensors due to its excellent electrical and optical properties and high physicochemical stability, and be- comes an international research hotspot in the last few years. The material characteristic advanta- ges of β-Ga2O3 are summarized. The research and application status of β-Ga2O3 materials in semi- conductor technology fields such as the power semiconductor devices, UV detectors, gas sensors, substrate materials and gate dielectric materials for GaN devices are reviewed. Finally, the application prospects of β-Ga2O3 materials in above-mentioned semiconductor technology fields are ana- lyzed, and it is pointed out that the fields of high power devices and solar-blind UV detectors would be the important development direction in the future.
作者
赵金霞
Zhao Jinxia(The 13th Research Institute,CETC,Shijiazhuang 050051,China)
出处
《微纳电子技术》
北大核心
2018年第12期870-877,916,共9页
Micronanoelectronic Technology
