摘要
基于BiCMOS工艺,提出了一种N沟道结型场效应晶体管(NJFET)。该NJFET通过在MOS管的栅极与漏极之间的N阱层上注入P型杂质,形成P型底部埋层(P-BOT)层。利用PBOT层的辅助耗尽效应来避免NJFET过早横向击穿,达到提高NJFET源-漏击穿电压的目的。采用Sentaurus TCAD软件对该BiCMOS NJFET的击穿电压进行仿真。结果表明,该NJFET的击穿电压达104V,在相同N阱掺杂浓度下,比传统NJFET提高了57.6%。
A novel assisted-depletion NJFET was designed in BiCMOS technology.The N-Well layer that was located at the region between gate and drain of the MOS transistor was implanted with boron,which had formed a buried P-BOT layer in the P-Sub.The P-BOT layer＇s assisted-depletion effect was used to raise the gate-drain breakdown voltage of NJFET by preventing the premature transverse breakdown.The breakdown voltage of the BiCMOS NJFET was simulated by Sentaurus TCAD tools.The simulation results showed that the breakdown voltage of the proposed NJFET structure had been improved to 104 V,which was enhanced up by 57.6% compared with that of the traditional NJFET at the same doping concentration in the N-Well layer.
作者
冯金荣
冯全源
陈晓培
FENG Jinrong; FENG Quanyuan; CHEN Xiaopei(Institute of Microelectronics , Southwest J iaotong University, Chengdu 611756, P. R. China)
出处
《微电子学》
CAS
CSCD
北大核心
2018年第5期682-685,共4页
Microelectronics
基金
国家自然科学基金资助项目(61531016)
四川省科技支撑计划重点资助项目(2016GZ0059
2017GZ0110)
