摘要
With reducing the absorber layer thickness and processing temperature, the recombination at the back interface is se- vere, which both can result in the decrease of open-circuit voltage and fill factor. In this paper, we prepare A12O3 by atomic layer deposition （ALD）, and investigate the effect of its thickness on the performance of Cu（In,Ga）Se2 （CIGS） solar cell. The device recombination activation energy （EA） is increased from 1.04 eV to 1.11 eV when the thickness of A12O3 is varied from O nm to 1 nm, and the height of back barrier is decreased from 48.54 meV to 38.05 meV. An effi- ciency of 11.57 % is achieved with 0.88-1ma-thick CIGS absorber layer.
作者
LIU Yang
LIU Wei
CHEN Meng-xin
SHI Si-han l
HE Zhi-hao
GONG Jln-long
WANG Tuo
ZHOU Zhi-qiang
LIU Fang-fang
SUN Yun
and XU Shu
刘杨;刘玮;陈梦馨;史思涵;何志超;巩金龙;王拓;周志强;刘芳芳;孙云;徐术(Tianjin Key Laboratory of Thin Film Devices and Technology,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University;Key Laboratory for Green Chemical Technology of Ministry of Education,Collaborative Innovation Center of Chemical Science and Engineering (Tianjin),School of Chemical Engineering and Technology,Tianjin University;Davidson School of Chemical Engineering,Purdue University)
基金
supported by the National Natural Science Foundation of China(Nos.61774089 and 61504067)
the Yang Fan Innovative & Entrepreneurial Research Team Project(No.2014YT02N037)
