摘要
A 1 550 nm long-wavelength vertical cavity surface emitting laser （VCSEL） on InP substrate is designed and fabri- cated. The transfer matrix is used to compute reflectivity spectrum of the designed epitaxial layers. The epitaxial layers mainly consist of 40 pairs of n-AlxGayIn（l-x-y）As/InP, and 6 strain compensated AlxGayln（l-x-y）As/InP quantum wells on n-InP substrate, respectively. The top distributed Bragg reflection （DBR） mirror system has been formed by fabricat- ing 4.5 pairs of SiO2/Si. The designed cavity mode is around 1 536 nm. The dip of the fabricated cavity mode is around 1 530 nm. The threshold current is 30 mA and the maximum output power is around 270 μW under CW opera- tion at room temperature.
作者
LIU Li-jie
WU Yuan-da
WANG Yue
AN Jun-ming
HU Xiong-wei
刘丽杰;吴远大;王玥;安俊明;胡雄伟(State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences;College of Material Science and Optoelectronic Technology,University of Chinese Academy of Sciences)
基金
supported by the National High Technology and Development Program of China(No.2015AA016902)
