摘要
高电子迁移率晶体管和谐振隧穿二极管是两种常用的高频器件,已经广泛应用于微波射频领域。由于太赫兹科学技术对国防科技、信息安全、农业生产等方面具有重要意义,这两种器件的应用范围逐渐渗透到太赫兹频段中。谐振隧穿二极管型栅控高电子迁移率晶体管兼具等离子振荡和负微分电阻的特性,非常适合太赫兹科学技术的发展与应用。阐述了该器件的性能和主要应用范围,最后指出了该器件制造和大范围商业推广的主要难点。
High electron mobility transistors （HEMT） and resonant tunneling diode （RTD） are wildly used in the area of microwave as two kinds of usual high frequency devices. Since terahertz science and technology has great significance in national defense technology, information security, agricultural production, etc. , applications of both HEMTs and RTDs gradually reach terahertz band. However, their performance cannot meet the needs of development gradually. RTD-gated HEMT which has plasma oscillation and negative differential resistance may have a promising prospect in terahertz applications. In this paper, the performance and potential applications of RTD-gated HEMT are explored. Finally, challenges in the manufacture of the device are proposed.
作者
朱长举
Zhu Changju(Phyfium Technology Co.,Ltd.,Tianjin 510006,China)
出处
《信息技术与网络安全》
2018年第9期4-8,12,共6页
Information Technology and Network Security
