摘要
以半导体侧面泵浦Nd:YAG作为1 064 nm基频激光源,长度40 mm的a切YVO_4作为拉曼晶体,采用声光调Q,获得了高效的1 176 nm拉曼激光输出。当脉冲重复率为10 k Hz、15 k Hz和20 k Hz时,测量了拉曼光输出功率和脉冲宽度随抽运功率的变化。在117.7W的输入泵浦功率和15 k Hz的脉冲重复率下,获得了6.98 W的1 176 nm激光输出,而从LD到拉曼光的光-光转换效率为5.93%。
The laser diode side-pumped Nd：YAG was used as 1064 nm fundamental frequency laser source, and the 40 mm a-cut YVO4 was used as Raman crystal. The Q-switching was performed by acousto-optic method. A high efficiency 1176 nm Raman laser has been obtained when the pulse repetition rates are 10 kHz 15 kHz and 20 kHz. The variation of Raman output power and pulse width with pump power is measured at 117.7 W input pump power and 15 kHz pulse repetition rate. The laser output of6.98 W at 1176 nm is obtained. The conversion efficiency from LD to Raman is 5.93 nm.
作者
李长明
李述涛
黄凯
孙新智
LI Chang-ming;LI Shu-tao;HUANG Kai;SUN Xin-zhi(Changchun University of Science and Technology,College of Science,Changchun 130022,China)
出处
《通信电源技术》
2018年第2期58-59,共2页
Telecom Power Technology
