摘要
碳化硅(SiC)金属-氧化物半导体场效应管(MOSFET)以其优良的性能得到广泛关注,结温是一个关键指标,用于健康状况监测。这里基于状态监控的需要,提出一种开通瞬态漏极电流变化率(di_(ds)/dt)结温提取的方法,首先从理论层面分析了di_(ds)/dt温度相关性,并用实验表明了di_(ds)/dt随着器件结温增加而增加,然后又对影响di_(ds)/dt的因素进行了分析,在双脉冲实验中证实了di_(ds)/dt的温度敏感度随负载电流和外部栅极电阻增加而增加,该方法在大驱动电阻下有更好的温度敏感度但也增加了开关损耗,牺牲了开关频率,基于此提出一种智能驱动器的方法,在不增加开关损耗的前提下有效测量SiC MOSFET的结温。
Silicon carbide（SiC） metal-oxide semiconductor field effect transistors（MOSFET） are gaining widespread attention for their excellent performance.Junction temperature is a key indicator for monitoring their health.Based on the need of state monitoring,a method of detecting junction temperature of switching transient leakage current rate（di（ds）/dt） is proposed.The di（ds）/dt temperature dependency is analyzed theoretically.The experimental results show that di（ds）/dt with the increase of the junction temperature of the device,the factors affecting the di（ds）/dt are analyzed.The doublepulse experiment confirmed that the temperature sensitivity of di（ds）/dt increases with the increase of load current and external gate resistance.However,this method has better temperature sensitivity under large resistance but also increases the switching loss at the expense of the switching frequency.Based on this,a smart driver approach is proposed to effectively measure the SiC MOSFET without increasing the switching loss junction temperature.
作者
黄德雷
杨帆
张地
HUANG De-lei, YANG Fan, ZHANG Di(China University of Mining and Technology, Xuzhou 221116, Chin)
出处
《电力电子技术》
CSCD
北大核心
2018年第7期73-75,共3页
Power Electronics
基金
国家重点研发计划(2016YFC0600804)
关键词
半导体场效应管
结温提取
碳化硅
semiconductor field effect transistors
junction temperature extraction
silicon carbide
