摘要
在场效应晶体管太赫兹探测器中,合理的天线设计可以增强晶体管和太赫兹波之间的耦合效率,从而提高太赫兹探测器的响应度.提出一种基于晶体管栅极边缘沟道电场的仿真来设计平面天线的方法.这种方法尤其适用于太赫兹波段晶体管输入阻抗不容易得到的情况.通过流片完成的基于氮化镓高电子迁移率晶体管的太赫兹探测器的响应度测试证实了这种方法的有效性.集成碟形天线和双偶极子天线的太赫兹探测器最大响应度分别在170.7 GHz(1568.4 V/W)和124.3 GHz(1047.2 V/W)频点处测得,这个测试结果接近基于晶体管栅极边缘沟道电场的仿真结果.
In the implementation of field effect transistor（ FET） terahertz（ THz） detectors,the integration of properly designed planar antennas could effectively enhance the coupling efficiencies betw een the transistors and THz radiation,thus improving the responsivities of THz detectors. A method to design the planar antenna w hich is based on the simulation of channel electric field at the gate edge of FET is reported here. This method is suitable for the situation w here the input impedances of FETs may not be conveniently obtained in the THz regime. The validity of this method in the antenna design is confirmed by the measurements of the fabricated Ga N/Al Ga N FET THz detectors. The maximum responsivities of the bow tie detector and the dual-dipole detector are obtained at170. 7 GHz（ 1 568. 4 V/W） and 124. 3 GHz（ 1 047. 2 V/W） respectively,w hich are close to the simulation results of channel electric field at the gate edge of the bow tie detector and the dual-dipole detector.
作者
张博文
颜伟
李兆峰
白龙
Grzegorz Cywinski
Ivan Yahniuk
Krzesimir Szkudlarek
Czeslaw Skierbiszewski
Jacek Przybytek
Dmytro B.But
Dominique Coquillat
Wojciech Knap
杨富华
ZHANG Bo-Wen1,2 , YAN Wei1, LI Zhao-Feng1,2, BAI Long1, Grzegorz Cywinski4,5, Ivan Yahniuk4, Krzesimir Szkudlarek4, Czeslaw Skierbiszewski4, Jacek Przybytek4, Dmytro B. Dominique Coquillat6, Wojciech Knap4,5,6, YANG Fu-Hua1,2,3(1. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 2. University of Chinese Academy of Sciences, Beijing 100049, China; 3. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 4. Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw PL01-142, Poland; 5. Central Laboratory CEZAMAT, Warsaw PL02-822, Poland; 6. Laboratory Charles Coulomb, University of Montpellier and CNRS, UMR 5221, Montpellier, Franc)
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2018年第4期389-392,共4页
Journal of Infrared and Millimeter Waves
基金
Supported by National Natural Science Foundation of China(61501421)
the National Key R＆D program of China(2016YFA02005003)
the One Hundred Talents Program of Chinese Academy of Sciences(Y673010000)
the Chinese Academy of Sciences Project(Y6JA061001)
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关键词
太赫兹探测器
平面天线
沟道电场
场效应晶体管
terahertz detectors
planar antenna
channel electric field
field effect transistors
