摘要
研究了不同腐蚀溶液体系下铟砷镓锑(InAs/GaSb)二类超晶格材料的湿法腐蚀工艺。根据腐蚀效果选择了由柠檬酸(C_6H_8O_7)、磷酸(H_3PO_4)、过氧化氢(H_2O_2)构成的混合腐蚀液。这种腐蚀液对InAs/GaSb材料腐蚀速率稳定,腐蚀后表面光滑,且下切效应小。同时,研究了该成分腐蚀液不同腐蚀液温度、浓度和各成分配比等条件对InAs/GaSb材料腐蚀速率,形貌和钻蚀情况的影响。根据实验结果配制了体积比为1∶1∶1∶40的柠檬酸(50%):磷酸(85%):过氧化氢(31%):水的腐蚀溶液,室温(20℃)下腐蚀速率约为9.48 nm/s。
Wet-chemical etching process of InAs/GaSb Type-II superlattice with different etchants was studied.A kind of mixed etchant was selected according to etching effect,it is composed of citric acid,phosphoric acid and hydrogen peroxide.This etchant has stable etching rate and low undercutting effect,and the morphology of the material surface is good after etching.In addition,the influence of different etchant temperatures,concentrations and composition proportions on etching rate,morphology and lateral etching were also studied.The experimental results show that when volume ratio of citric acid,phosphoric acid,hydrogen peroxide and water is 1∶1∶1∶40 etching rate is about 9.48 nm/s at room temperature of 20 ℃.
作者
亢喆
温涛
郭喜
KANGZhe;WENTao;GUO Xi(North China Research Institute of Electro-Optics,Beijing 100015,China)
出处
《激光与红外》
CAS
CSCD
北大核心
2018年第7期867-871,共5页
Laser & Infrared
关键词
铟砷镓锑
二类超晶格
湿法腐蚀
溶液配比
InAs/GaSb
type-Ⅱ superlattice
wet-chemical etching
proportion
