摘要
随着新能源产业的快速发展,宽禁带半导体越来越受到人们的关注。其中,碳化硅半导体已经开始在多个工业领域得到了广泛应用。在此,针对宽禁带半导体的材料性能、碳化硅半导体的功率器件进行了介绍。此外,也对碳化硅功率器件的封装技术进行了介绍。然后,对于使用碳化硅功率器件较多的应用领域进行了分析。最后,对于未来碳化硅半导体行业的技术发展趋势提出了展望。
With the fast growth of new-energy industry, Wide Band Gap （WBG） semiconductors have attracted more and more attention, among which Silicon Carbide （SiC） semiconductors have been widely implemented in many industrial applications. The review summaries the material properties of WBG semiconductors and power device family of SiC semiconductor. In addition, an introduction to the packaging technology for SiC power devices has also been given. Furthermore, the main applications for SiC power devices have been analyzed as well. Finally, the SiC technology development trend has been overviewed.
作者
曹峻
CAO Jun(Inventchip Technology Co.,Ltd,Shanghai 201306,China)
出处
《集成电路应用》
2018年第8期5-9,共5页
Application of IC
基金
上海科技创新项目临港智能制造产业专项基金(2017.ZN2017020315)
关键词
宽禁带半导体
碳化硅
功率器件
wide band gap （WBG） semiconductors
silicon carbide （SiC）
power device
