摘要
基于n型晶体硅太阳电池,分析了经光辐照后电池各性能参数的变化,探究了n型晶体硅太阳电池光诱导衰减机理。使用工业化设备在大面积（156 mm×156 mm）n型单晶硅片上制备太阳电池。利用太阳光谱模拟仪对制备的太阳电池进行光照处理,对比各阶段太阳电池电性能参数。结果表明,光照时会导致太阳电池表面减反射膜SiN∶H/Si界面处积聚大量固定电荷,增大界面态密度,破坏电池表面钝化层结构,导致开路电压和短路电流产生较大衰减,35 kWh/m^2光辐照后n型硅太阳电池效率衰减3.6%。在380℃低温退火处理后电池效率基本可恢复到初始状态。内量子效率测试结果表明光辐照后电池短波区域响应减弱,前表面界面效应导致电池效率发生较大衰减。
Based on n-type crystalline silicon solar cells, the change of various performance parameters of the cells after light soaking was analyzed,and the light induced degradation mechanism of n-type solar cells was explored. Solar cells were fabricated on large-area（ 156 mm × 156 mm） n-type monocrystalline silicon wafers with industrial equipment. The prepared solar cells were irradiated by the solar spectral simulator and the electrical performance parameters of the solar cells in each stage were compared. The results show that light soaking can cause a large amount of fixed charges to accumulate at the SiN ∶ H/Si interface on the surface of the solar cell antireflection film,increasing the interface state density and destroying the passivation layer structure on the cell surface,resulting in large degradation of the open circuit voltage and short-circuit current. The efficiency of the n-type silicon solar cell decreased by 3. 6% after 35 kWh/m^2 light soaking. After the low temperature annealing treatment at 380 ℃,the cell efficiency can basically return to the initial state. The internal quantum efficiency test results show that the response in the short wavelength range is weakened after light soaking,and the interface effect of the front surface induces the large degradation of the cell efficiency.
作者
李能能
马继奎
Li Nengneng;Ma Jikui(School of Electronic Engineer, Xi＇an Aeronautical University, Xi＇an 710077, China;SPIC XI＇AN Solar Power Co. , Ltd. , Xi＇an 710061, China)
出处
《半导体技术》
CAS
CSCD
北大核心
2018年第7期540-544,549,共6页
Semiconductor Technology
基金
陕西省自然科学基础研究计划面上项目(2017JM6096)
国家级大学生创新创业训练计划项目(201611736010)
关键词
N型硅
太阳电池
光诱导衰减
光辐照
退火
n-type silicon
solar cell
light induced degradation
light soaking
annealing
