摘要
为提高电容器的比电容,设计了基于三维（3D）结构的金属-绝缘体-金属（MIM）电容器。采用原子层沉积（ALD）技术制备电容器功能薄膜层,通过建立3D结构原子层沉积理论模型,拟合得到了原子层沉积过程中薄膜覆盖率与3D结构之间的依赖关系。基于该模型优化了工艺参数,制备了不同介质层厚度的电容器,并对器件进行了C-V和I-V特性测试,得到电容器击穿场强和介电常数均值分别为6.68 MV/cm和7.95。同时,制备的3D MIM电容器的比电容达到212.5 fF/μm2,相比常规平面电容器,其电容密度提高了一个数量级。且该电容器击穿场强和介电常数与薄膜厚度之间具有良好的线性关系,表明理论模型合理,实现了基于3D结构的原子层沉积薄膜可控生长。
In order to improve the specific capacitance of the capacitor,the three-dimensional（3D） structure based metal-insulator-metal（MIM） capacitor was designed. The functional film layer of the capacitor was prepared by atomic layer deposition（ ALD） technology,and the dependency relationship between the film coverage and 3D structure during atomic layer deposition was obtained by establishing a theoretical model of 3D structure atomic layer deposition. Based on this model,the process parameters were optimized and the capacitors with different thicknesses of the dielectric layer were prepared. The C-V and I-V characteristics tests of the devices were carried out,showing that the average values of the breakdown field strength and dielectric constant of the capacitors are 6. 68 MV/cm and7. 95,respectively. Meanwhile,the specific capacitance of the prepared 3D MIM capacitor reaches212. 5 fF/μm^2,and its capacitance density is increased by an order of magnitude compared with the conventional planar capacitor. The breakdown field strength and dielectric constant of the capacitor have a good linear relationship with the film thickness,indicating that the theoretical model is reasonable and the controllable growth of the 3D structure based atomic layer deposition film is realized.
作者
穆继亮
徐方良
孙雅薇
李芬
丑修建
Mu Jiliang;Xu Fangliang;Sun Yawei;Li Fen;Chou Xiujian(Key Laboratory of Instrumentation Science ＆ Dynamic Measurement of Ministry of Education, North University of China, Taiyuan 030051, China;North Automatic Control Technology Institute, Taiyuan 030006, China)
出处
《半导体技术》
CAS
CSCD
北大核心
2018年第7期517-522,共6页
Semiconductor Technology
基金
国家自然科学基金资助项目(61471326)
