摘要
总结了我们将原位技术和透射电子显微学分析方法相结合,针对纳米材料和器件的结构、形貌、成分以及电势分布等物理性质的动态行为所开展的综合物性表征和分析工作.主要成果有:揭示了C_(60)纳米晶须在焦耳热作用下的结构相变路径;观察到了电荷俘获存储器中的电荷存储位置以及栅极电压诱导的氧空位缺陷;研究了阻变存储器中氧空位通道的形成过程以及导电通道的开关机理.这些成果不但有助于深入理解纳米材料和器件相关功能的物理机理,改善其工作性能,更展示了透射电子显微学在微电子领域强大的研究能力.
Advanced transmission electron microscopy combined with in situ techniques provides powerful ability to charac- terize the dynamic behaviors of phase transitions, composition changes and potential variations in the nanomaterials and devices under external electric field. In this paper, we review some important progress, in this field, of the expla- nation of structural transition path caused by the Joule heating in C6o nanowhikers, the clarification of electron storage position in charge trapping memory and the direct evidences of the oxygen vacancy channel and the conductive filament formation in resistive random access memory. These studies could improve an understanding of the basic mechanism of nanomaterial and device performance, and also demonstrate the diversity of the functions of transmission electron microscopy in microelectronic field.
作者
李超
姚湲
杨阳
沈希
高滨
霍宗亮
康晋锋
刘明
禹日成
Li Chao;Yao Yuan;Yang Yang;Kang Jin-Feng;Shen Xi;Gao Bin;Huo Zong-Liang;Liu Ming;Yu Ri-Cheng(Laboratory of Advanced Materials and Electron Microscopy, Beijing National Laboratory of Condensed Matter Physics 3） 4） Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China;Key Laboratory of Microelectronics Device and Integrated 2~chnology, Institute of Microelectronics Chinese Academy of Sciences, Beijing 100029, China)
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2018年第12期119-133,共15页
Acta Physica Sinica
关键词
透射电子显微学
原位
纳米材料
微电子器件
transmission electron microscopy
in situ
nanomaterials
microelectronic device
