摘要
研究了快速热退火(RTA)对GaAs/AlGaAs量子阱材料结构及发光特性的影响。结果表明,当退火温度为800℃时,材料晶体质量和光致发光(PL)强度得到显著提升;当退火温度为900℃时,材料晶体质量和PL强度降低。依据峰值能量理论得到了室温下PL峰位的发光机制。通过分峰拟合发现,RTA导致PL峰位整体蓝移。PL扫描图表明,RTA可以显著提高材料的整体晶体质量和发光均匀性。
The influence of rapid thermal annealing （RTA） on the structural and luminescence properties of GaAs/ AlGaAs quantum wells is investigated. The results show that, when the annealing temperature is 800 ℃, the crystal quality and photoluminescence （PL） intensity is significantly improved. When the annealing temperature is 900 ℃, the crystal quality and PL intensity decrease. According to the peak energy theory, the luminous mechanism at room temperature of PL peaks is obtained. A whole RTA-induced blue shift of PL peaks is observed by peak-differentiating and fitting. The PL mapping demonstrates that RTA can significantly improve the whole crystal quality and the luminous uniformity of materials.
作者
智民
方铉
牛守柱
房丹
唐吉龙
王登魁
王新伟
王晓华
魏志鹏
Zhi Min;Fang Xuan;Niu Shouzhu;Fang Dan;Tang Jilong;Wang Dengkui;Wang Xinwei;Wang Xiaohua;Wei Zhipeng(State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China)
出处
《激光与光电子学进展》
CSCD
北大核心
2018年第5期335-341,共7页
Laser & Optoelectronics Progress
基金
国家自然科学基金(61404009
61474010
61574022
61504012
61674021
11674038)
