摘要
采用表面机械研磨（SMAT）的方法调控TA2表面阳极氧化膜层的微观组织结构,研究膜层的微观组织结构和耐蚀性能。利用扫描电镜（SEM）与能谱仪（EDS）分析膜层的厚度及元素分布,用X射线衍射仪（XRD）、拉曼光谱仪和X射线光电子能谱仪（XPS）探讨膜层的结晶性和价态组成,利用电化学工作站研究膜层的耐腐蚀行为。结果表明：SMAT可以有效加速氧化膜的生长速度,明显增加膜层的厚度,提高膜层致密性、结合力和稳定性,降低膜层空位缺陷,减少Cl-离子传输的通道,膜层厚度较处理前提高了2.7倍;在3.5 mass%NaCl溶液中的腐蚀电位提高了0.163 V,腐蚀电流密度降低了0.015 A·cm^-1,分别提高和降低了36.96%和44.12%。
Microstructure of anodic oxide film on TA2 surface was regulated by surface mechanical attrition treatment（SMAT）,and the microstructure and corrosion resistance of the film were studied. The thickness and elemental distribution of the film were determined by using scanning electron microscopy and energy dispersive spectroscopy. The crystallinity and valence state composition of the film were investigated by means of X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy. In addition, the corrosion resistance behavior of the film was studied by electrochemical workstation. The results show that the SMAT can accelerate the growth rate of the oxide film,increase the thickness,density,bonding strength and stability of the film,reduce the film vacancy defects,reduce the Cl-ion transmission channel,and the film thickness than before treatment increases 2. 7 times; the corrosion potential of the film with SMAT in 3. 5 mass% NaCl solution increases by 0. 163 V,the corrosion current density decreases by 0. 015 A·cm^-1,respectively increases and decreases by 36. 96% and 44. 12% than the anodic oxide film without SMAT.
作者
王志文
刁瑞佳
付天林
苑振涛
于晓华
詹肇麟
WANG Zhi-wen;DIAO Rui-jia;FU Tian-lin;YUAN Zhen-tao;YU Xiao-hua;ZHAN Zhao-lin(Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China;National Engineering Research Center of Waste Resource Recovery, Kunming University of Science and Technology, Kunming 650093, China)
出处
《材料热处理学报》
EI
CAS
CSCD
北大核心
2018年第5期100-107,共8页
Transactions of Materials and Heat Treatment
基金
国家自然科学基金(51601081,51665022)
关键词
TA2纯钛
机械研磨
阳极氧化
膜层结构
耐腐蚀行为
TA2 pure titanium
SMAT
anodization
film structure
corrosion resistance behavior
