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辉弧放电过渡区间靶电流密度对TiN薄膜结构及性能的影响

Influence of Current Density at Glow-Arc Discharge Transitional Section on Microstructure and Properties of TiN Films
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摘要 通过可调脉冲电源控制模式将气体放电伏安特性引至辉弧放电过渡区间,并在不同的电流密度条件下制备了TiN薄膜,采用XRD,SEM,TEM,纳米压痕仪与涂层附着力自动划痕仪等表征方法对比研究了辉弧放电过渡区间靶电流密度对薄膜组织结构、硬度及膜基结合强度的影响。结果表明,随着电流密度增大,镀料粒子由溅射环境的碰撞脱靶逐渐转变为碰撞增强热发射脱靶,具有更高密度、高离化、高能量的沉积粒子;薄膜由非晶态逐渐转变为晶态,具有更为良好的表面质量和致密程度,且薄膜的硬度、膜基结合力分别由13.4 GPa、2.4 N提高至24.7 GPa、21.6 N。 The volt-ampere characteristics of gas discharge was introduced into the glow-arc discharge transitional section using an adjustable pulse power control mode and TiN films were deposited at different current densities. The influences of target current density on the microstructure, hardness and bonding strength of the films were investigated by XRD, SEM, TEM, nano indentation tester and coating adhesion automatic scratch tester. The results show that the leave-target mechanism of plating material particles transforms from collide leave-target in sputtering condition to collide enhance heat emission leave-target and the deposition particles have a higher density, high ionization and high energy with the increase of current density. The films have better surface quality and density degree, and the hardness and membrane-binding strength are upgraded from 13.4 GPa to 24.7 GPa and from 2.4 N to 21.6 N, respectively.
作者 郝娟 蒋百灵 杨超 吴祥 张静 丁郁航 Hao Juan;Jiang Bailing;Yang Chao;Wu Xiang;Zhang Jing;Ding Yuhang(Microarc Electronics Laboratory, Xi'an University of Technology, Xi'an 710048, China)
出处 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2018年第4期1275-1280,共6页 Rare Metal Materials and Engineering
基金 国家自然科学基金(51271144)
关键词 辉弧放电过渡区间 脱靶机制 电流密度 TIN薄膜 glow-arc discharge transitional section leave-target mechanism current density TiN films
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