摘要
研究了不同偏置条件下国产商用pnp型双极晶体管在宽总剂量范围内的辐射损伤特性和变化规律。实验结果表明,在100 rad（Si）/s和0.01 rad（Si）/s剂量率辐照下,总累计剂量达到200 krad（Si）时,这一宽总剂量范围内辐射损伤趋势均随着总剂量值不断累积而增大,且并未出现饱和。相同剂量率辐照下,发射结施加反偏状态时国产商用pnp双极晶体管的过剩基极电流变化最大,正偏下最小,零偏介于二者之间。两款晶体管均表现出明显的低剂量率损伤增强效应（ELDRS）,且在反偏下ELDRS更显著。并对出现这一实验结果的损伤机理进行了探讨。
The radiation damage characteristics and variation rules of domestic commercial pnp bipolar transistor in a wide range of total dose were investigated under different bias conditions. The experimental results show that the radiation damage increases with the dose accumulation at 100 rad（ Si）/s and 0. 01 rad（ Si）/s dose rate in a wide range of total dose,and there is no saturation until the total ionizing dose of 200 krad（ Si）. Under the same dose rate,the variations of the excess base current is larger at reverse bias for base-emitter junction,smaller under forward bias and moderate under zero bias. Both the two types of transistors exhibit enhanced low dose rate sensitivity（ ELDRS） obviously and the ELDRS is more significant at reverse bias. Additionally,the damage mechanism of the experimental results was discussed.
作者
魏昕宇
陆妩
李小龙
王信
孙静
于新
姚帅
刘默寒
郭旗
Wei Xinyu;Lu Wu;Li Xiaolong;Wang Xin;Sun Jing;Yu Xin;Yao Shuai;Liu Mohan;Guo Qi(School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Key Laboratoryof Electronic Information Materials and Devices, Urumqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China)
出处
《半导体技术》
CAS
CSCD
北大核心
2018年第5期369-374,共6页
Semiconductor Technology
基金
国家自然科学基金联合基金资助项目(U1630141)
中国科学院西部之光西部青年学者B类项目(2016-QNXZ-B-7)
