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带隙渐变纳米线的制备及其非线性光学效应研究 被引量:1

Synthesis of Nanowires with the Tunable Bandgap and Nolinear Optical Effect
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摘要 由于一般的半导体纳米材料只有单一带隙,限制了其应用范围。通过搭建气–液–固法生长纳米线的实验装置,引入金作为催化剂,并加入移动源,成功制备出单根带隙渐变的硫硒化镉纳米线。其成分从一端的纯硫化镉连续过渡到另一端的纯硒化镉,对应的带隙从2.44 e V渐变到1.74 e V。并使用波长为405 nm的激光照射该纳米线,得到它的荧光光谱图来证实其带隙呈渐变状态。利用波长为1 064 nm的激光,将其耦合进单根纳米线中,产生了532 nm的绿色倍频光和双光子荧光,这说明硫硒化镉纳米线具有二阶和三阶的非线性光学效应。 A common semiconductor nanomaterial has only a single bandgap, which confines its application. An experimental system was set up to carry out the nanowires growth by the vapor-liquidsolid(VLS) method using Au as a catalyst and furnishing with a moving source, and single Cd SSe nanowires with tunable bandgap were synthesized successfully. The composition transits from pure Cd S in one end into pure Cd Se in the other side, correspondingly the bandgap changes from 2.44 e V to 1.74 e V.A laser of wavelength 405 nm was used to confirm the tunable bandgap of the Cd SSe nanowires.Further, a laser of 1 064 nm was coupled into the single nanowire, resulting in producing a green double frequency laser of 532 nm and a two-photon fluorescence, which proves that the Cd SSe nanowire has a nolinear optical effect of both second and third harmonic generations.
作者 汪雨 吴志瀚 谷付星 WANG Yu;WU Zhihan;GU Fuxing(School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, Chin)
出处 《上海理工大学学报》 CAS 北大核心 2018年第2期145-149,共5页 Journal of University of Shanghai For Science and Technology
基金 国家自然科学基金资助项目(11674230)
关键词 半导体纳米线 硫硒化镉 气–液–固法 非线性光学效应 semiconductor nanowire CdSSe vapor-liquid-solid (VLS) method nolinear optical effect
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