摘要
研究了基于圆片级苯并环丁烯(Benzocyclobutence,BCB)键合技术的Cu-Cu互连的界面情况。提出一种Cu凸点插针形式的圆片级BCB键合结构,研究BCB预固化程度、键合压力以及BCB与Cu厚度差等因素对晶圆界面键合质量的影响,并对此键合结构进行了键合空洞检测与剖面SEM分析,以及温循可靠性评价。结果表明,当预固化温度为210℃、键合压力为2×10~5 Pa,电流密度为20mA/cm^2、Cu与BCB厚度差值为3μm时,键合结构界面无空洞、键合质量高,并且Cu-Cu互连导通良好,接触电阻小于10mΩ。
In this paper,a wafer-level BCB bonding structure with copper bump pin is proposed.The interface of Cu-Cu interconnect based on the wafer level BCB bonding technology is investigated.The influences of BCB pre-curing degrees,bonding pressures,and thickness differences between the BCB and Cu layers on the bonding quality at the wafer interface were also evaluated.The bonding structure was tested by bonding void detection,profile SEM analysis,and temperature cycling reliability evaluation.The results show that under the conditions when the pre-curing temperature is 210℃,the bonding pressure is 2×105 Pa,the current density is 20 mA/cm2 and the thickness difference between the Cu and BCB layers is 3μm,no hole can be observed on the bonding interface,indicating high bonding quality and good Cu-Cu interconnect conduction with the contact resistance of less than 10 mΩ.
作者
丁蕾
陈靖
杜国平
刘米丰
王立春
DING Lei;CHEN Jing;Du Guoping;Liu Mifeng;WANG Lichun(Shanghai Institute of Aerospace Electronic Technology , Shanghai, 201109,CHN;The 55th Research Institute of China Electronics Technology Group Corporation, Nanjing, 210016,CHN)
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2018年第2期150-156,共7页
Research & Progress of SSE
关键词
圆片级键合
键合结构
苯并环丁烯
剪切强度
接触电阻
wafer-level bonding
bonding structure
Benzocyclobutene
shear strength
contact re-sistance
