摘要
为了减小纳米压印光刻胶与模板间的接触黏附力，合成了一种无氟抗粘巯基一烯纳米压印光刻胶。以A，A，A’-三（4-羟苯基）-1-乙基-4-异丙苯（TPA）和溴丙烯为原料，采用相转移催化法制备了一种功能性单体A，A，A’-三（4-丙烯基苯基醚）-1-乙基-4-异丙苯（TPAE），并将其按特定配比与三羟甲基丙烷三（3-巯基丙酸酯）和光引发剂配制成纳米压印光刻胶。实时傅里叶红外光谱（FT-IR）分析表明，当辐射剂量为200mJ／cm^2时，双键的转化率为78．0％，巯基的转化率为78．1％。胶膜的去离子水接触角为90°。纳米压印光刻胶脱模后的图形结构规整，保真度高，具有良好的脱模性能。
In order to reduce the contact adhesion between the nanoimprint lithography resist and mold, a ＂thiol-ene＂ nanoimprint lithography resist with fluorine-free anti-sticking property was synthesized. A functional monomer A, A, Ar-tris （4-propenenylphenyl ether） -1-ethyl-4-iso- propylbenzene （TPAE） was synthesized with the phase-transfer catalysis method using A, A, Ar-tris （4-hydroxyphenyl） -1-ethyl-4-isopropylbenzene （TPA） and allyl bromide as raw mate- rials. The nanoimprint lithography resist was obtained via mixing TPAE, trimethylolpropane tris （3-mercaptopropionate） and photoinitiator with specific proportion. The real-time Fourier trans- form infrared spectroscopy （FT-IR） analysis shows that with an irradiation dose of 200 mJ/cm2 , the double bond conversion rate and thiol conversion rate are 78.0% and 78.1%, respectively. The deionized water contact angle of the resist film surface is 90°. The nanoimprint lithography resist after demolding has a regular pattern structure, high fidelity and outstanding demolding property.
作者
李桃
廖兵
韦代东
汪慧怡
雍奇文
罗业燊
庞浩
Li Tao;Liao Bing;Wei Daidong;Wang Huiyi;Yong Qiwenl,;Luo Yeshen;Pang Hao(Key Laboratory of Cellulose and Lignocellulosics Chemistry, Guangzhou Institute of Chemistry, Chinese Academy of Sciences, Guangzhou 510650, Chinas;University of Chinese Academy of Sciences, Beij ing 100049, China;Guangdong Academy of Sciences, Guang zhou 510650, China)
出处
《微纳电子技术》
北大核心
2018年第6期401-407,共7页
Micronanoelectronic Technology
基金
广东省科学院实施创新驱动发展能力建设专项(2017GDASCX-0705)
关键词
紫外纳米压印
光刻胶
巯基-烯反应
无氟抗粘
脱模
ultraviolet nanoimprint lithography
photoresist
thiol-ene reaction
fluorine-free anti-sticking
demolding
