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Transitional Area of Ce^4+to Ce^3+ in SmxCayCe1-x-yO2-δ with Various Doping and Oxygen Vacancy Concentrations:A GGA+U Study 被引量:3

Transitional Area of Ce^(4+) to Ce^(3+) in Sm_xCa_yCe_(1-x-y)O_(2-δ) with Various Doping and Oxygen Vacancy Concentrations: A GGA + U Study
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摘要 In this work, we perform DFT + U periodic calculations to study geometrical and electronic structures and oxygen vacancy formation energies of SmxCayCe1-x-yO2-δ systems (x = 0.0312, 0.0625, 0.125 and 0.250; y = 0.0312, 0.0625, 0.125 and 0.250; δ = 0.0312, 0.0625, 0.125, 0.250 and 0.50) with different oxygen vacancy and doping concentrations. The calculated results show that the VI-Sm3+-V2 structures where there is a position relationship of the face diagonal between V1 and V2 both nearest to Sm3+ have the lowest energy configurations. The study on electronic structures of the SmxCayCe1-x-yO2-δ systems finds that excess electrons arise from oxygen vacancies and are localized on f-level traps of their neighbor Ce, and Ca2+ and Sm3+ co-doping effectively restrains the reduction of Ce4+. In order to avoid the existence of Ce3+, x and y must be both larger than 0.0625 as δ = 0.125 or δ must be smaller than 0.125 as x = y = 0.0625. The Ce3+/Ce4+ change ratio k has an obvious monotonous increase with increasing the vacancy oxygen concentration. The introduction of Sm3+ decreases k. In addition, the doped Sm3+ can restrain the reduction of Ce4+ when the V1-Sm3+-V2 structure with a face diagonal position relationship in lower reduced atmosphere exists. It need be pointed out that the Sm025Ce07501.5 system should be thought of as a Sm-doped Ce2O3 one. In this work, we perform DFT + U periodic calculations to study geometrical and electronic structures and oxygen vacancy formation energies of SmxCayCe1-x-yO2-δ systems (x = 0.0312, 0.0625, 0.125 and 0.250; y = 0.0312, 0.0625, 0.125 and 0.250; δ = 0.0312, 0.0625, 0.125, 0.250 and 0.50) with different oxygen vacancy and doping concentrations. The calculated results show that the VI-Sm3+-V2 structures where there is a position relationship of the face diagonal between V1 and V2 both nearest to Sm3+ have the lowest energy configurations. The study on electronic structures of the SmxCayCe1-x-yO2-δ systems finds that excess electrons arise from oxygen vacancies and are localized on f-level traps of their neighbor Ce, and Ca2+ and Sm3+ co-doping effectively restrains the reduction of Ce4+. In order to avoid the existence of Ce3+, x and y must be both larger than 0.0625 as δ = 0.125 or δ must be smaller than 0.125 as x = y = 0.0625. The Ce3+/Ce4+ change ratio k has an obvious monotonous increase with increasing the vacancy oxygen concentration. The introduction of Sm3+ decreases k. In addition, the doped Sm3+ can restrain the reduction of Ce4+ when the V1-Sm3+-V2 structure with a face diagonal position relationship in lower reduced atmosphere exists. It need be pointed out that the Sm025Ce07501.5 system should be thought of as a Sm-doped Ce2O3 one.
出处 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 2018年第2期198-209,共12页 结构化学(英文)
基金 Supported by the National Natural Science Foundation of China(No.51474133) Inner Mongolia Natural Science Foundation(No.2016MS0513)
关键词 cerium oxide oxygen vacancies DOPING electronic structures GGA+U cerium oxide, oxygen vacancies, doping, electronic structures, GGA+U
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