摘要
实验对全固态同轴!微带型横向半绝缘砷化镓(SI-GaAs)光电导开关传输特性进行了研究:当偏置电压达到一定阈值时,普通开关进入了非线性锁定(Lock-on)工作模式;在相同实验条件下,当微带线出现不连续时,输出的电脉冲波形没有出现锁定现象;分别用空气击穿的流注模型和微带线等效电容机理分析了微带线不连续效应引起整个开关电路性能变化及抑制开关Lock-on效应的原因。
The transmission characteristic of all-solid state coaxial-microstrip type semi-insulating（SI） GaAs photoconductive switch was investigated experimentally.The experiment result showed that the ordinary switch would come into non-linear（Lock-on） mode as the bias voltage reached certain threshold.Under the same experimental condition,electric pulse waveform did not appear Lock-on phenomenon when microwave transmission lines were discontinuous.The switch performance change and suppressing Lock-on effect,which attributed to discontinuous microwave transmission lines,were analyzed based on streamer model of air breakdown and microwave transmission line of equivalent capacitance respectively.
作者
马湘蓉
花涛
宋宇飞
MA Xiangrong , HUA Tao , SONG Yufei(School of Communication Engineering, Nanjing Institute of Technology, Nanfing 211167, China)
出处
《电子器件》
CAS
北大核心
2017年第6期1387-1392,共6页
Chinese Journal of Electron Devices
基金
南京工程学院引进人才科研启动基金项目(YKJ201418)
南京工程学院校级基金项目(CKJB201504
QKJB201406)
关键词
SI-GaAs光电导开关
微带线
不连续
间隙
击穿
SI-GaAs photoconductive switch
micro stripline discontinuity
discontinuity
gap
breakdown
