摘要
针对光电子器件、集成电路等应用领域对单晶蓝宝石高质量的表面需求,而单晶蓝宝石自身的硬度和良好的化学稳定性给抛光带来较大的困难。文章在分析、对比直接采用2μm金刚石磨料化学机械抛光蓝宝石基片效果的基础上,提出机械研磨与化学机械抛光相结合的工艺抛光蓝宝石。结果表明,采用10μm的碳化硼磨料机械研磨蓝宝石,材料去除率为8.03μm/h,表面粗糙度Ra由1.18μm迅速降至22.326 nm;采用粒径为2μm和0.5μm的金刚石磨料化学机械抛光蓝宝石晶片,有效的去除机械抛光带来的损伤,最后表面粗糙度Ra可达0.55 nm。此抛光工艺能满足蓝宝石晶体高效、超光滑、低损伤的抛光要求。
Single crystal sapphire surface of high quality is required in the fields of optoelectronic devices,integrated circuits,and so on,Single crystal sapphire substrates require to possess high quality surface finish and integrity to significantly enhance performance and reliability of various microelectronics and LED devices. but its super high mechanical hardness and super strong chemical inertness bring enormous difficult for polishing. In this paper,the effect of chemical mechanical polishing with using 2 μm diamond abrasive was analyzed and compared on sapphire wafer. A method of technology for processing single crystal sapphire was proposed,which integrates mechanical lapping with chemically assisted mechanical polishing. Experimental results showthat the material removal rate（ MRR） is 8. 03 μm/h and surface roughness Ra is reduced from 1. 18 μm to 22. 326 nm by lapping with using boron carbide（ 10 μm）. 2 μm and 0. 5 μm diamond abrasive are used to remove the damage of mechanical polishing. Finally,a surface roughness,Ra = 0. 55 nm,can be achieved by using this machining process. Combination of polishing process can basically satisfy requirements of high efficiency,lowdamage,ultra smooth for polishing sapphire crystal.
出处
《组合机床与自动化加工技术》
北大核心
2018年第2期136-139,共4页
Modular Machine Tool & Automatic Manufacturing Technique
基金
国家自然科学基金项目(51305278)
中国博士后基金面上项目(2014M551124)
教育部博士点基金(20132102120006)
沈阳市科技项目(F16-205-1-10)
关键词
单晶蓝宝石
机械研磨
化学机械抛光
single crystal sapphire
mechanical lapping
chemical mechanical polishing
