摘要
为了改善W波段全波段Schottky二极管三倍频器高端性能,建立倍频二极管实际安装电路环境下的三维精确仿真模型.在传统去嵌入法提取二极管等效电路参数工作基础上,改进了阻抗参数提取方法.采用UMS公司的DBES105a双Schottky结二极管作为倍频器件,将二极管封装、焊盘(安装二极管的微带端线)及邻近的腔体空间作为一个子区域进行三维建模分析,结合Schottky结的非线性模型,深入研究了焊盘尺寸、管子安装高度及腔体尺寸对输入输出阻抗宽带特性的影响.在此基础上,采用场路结合的仿真技术,优化设计了W波段宽带无源三倍频器.实验测试结果表明,在约为20 d Bm功率激励下,所设计的三倍频器在75~110 GHz内输出功率典型值为5 d Bm,功率波动小于±1.25 d Bm,实现了倍频器在W波段全波段优良的功率平坦度特性.
To improve the characteristics of W-band frequency triplers at the upper end of the full frequency band,an accurate 3 D EM（ electromagnetic） model for the Schottky diodes together with their actual installation circuit environment is established. The method for extracting the equivalent impedance parameters is improved based on the traditional de-embedding method for modeling the Schottky diodes. By utilizing two Schottky diode chips,DBES105 a delivered by UM S as multiply devices,the package of the diodes,mounting pads（ microstrip ends,upon which the diodes are mounted） as well as their adjacent cavity region are treated as an independent sub-region for 3 D modeling and analysis. The effects of the dimensions of the pads,the mounting height as well as the dimension of shielding cavity on the performance of the input and output impedance over a broad frequency band are investigated combined with the nonlinear model of Schottky junction. Based on a co-simulation procedure of a full wave field analysis combined with a circuit simulator,a full band W-band passive tripler is designed and optimized. The testing results show that with an input driving power of about 20 d Bm at Ka-band,the tripler delivers about 5 d Bm output pow er with a variation of less than ± 1. 25 d B for 75 to 110 GHz frequency range,thus demonstrating the excellent power flatness of the W-band frequency tripler.
出处
《东南大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2018年第1期1-6,共6页
Journal of Southeast University：Natural Science Edition
基金
国家自然科学基金资助项目(51678134
51208092
31370539)
中央高校基本科研业务费专项资金资助项目(3203007405)
