摘要
采用等离子体增强原子层沉积(PEALD)技术,以NH3为掺杂源,制备了氮δ掺杂Cu_2O薄膜,研究了N掺杂对Cu_2O薄膜表面形貌、光学及电学性质的影响。研究结果表明,N掺杂引起了晶格畸变,Cu_2O薄膜的表面粗糙度增大;掺杂后Cu_2O薄膜的带隙宽度从2.70eV增加到3.20eV,吸收边变得陡峭;掺杂后载流子浓度为6.32×1019 cm^(-3),相比于未掺杂样品(5.77×1018 cm^(-3))的提升了一个数量级。
By the plasma enhanced atomic layer deposition （PEALD） technique, the N δ-doped Cu2O films are prepared with NH3 as the doping source. The effects of N-doping on the surface morphology, optical and electrical properties of Cu2O films are studied. The study results show that the N-doping causes the lattice distortion and the surface roughness of the N δ-doped Cu2O thin films increases. The bandgap width of the N δ-doped Cu2O thin films increases from 2.70 eV to 3.20 eV, and the absorption edge becomes steep. The carrier concentration of the doped sample is 6.32×10^19 cm^-3, enhanced by one order of magnitude comparing with that of the un-doped samples （5.77×10^18 cm^-3）.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2018年第1期135-139,共5页
Chinese Journal of Lasers
基金
国家自然科学基金(61404009)
吉林省科技发展计划(20170520118JH)
长春理工大学科技创新基金(XJJLG-2016-14)
