摘要
国产中微机台在钝化层刻蚀工艺应用中发现容易导致后续的铝薄膜溅射工艺出现铝须缺陷(Whisker),进而造成产品出现开路/短路良率异常。影响AL whisker的因素很多,主要有两方面:一是由于AL film和上下地间TiN film之间热应力的不匹配容易导致AL whisker,其主要由铝溅射自身工艺能力决定;二是前层表面状况的影响。讨论中微机台刻蚀后的表面残留导致Al溅射后出现铝须缺陷的现象,并对其成因进行系统性分析,同时对其解决方案进行详细的介绍。
55LP product passivation etch process suffer Open/Short bin5 failed issue on domestic AMEC tool ,it is found that worse surface resident the post of passl-et is the root cause, which cause worse aluminium whisker defect during AI sputter process. There are two mainly reason that cause AI whisker defect： 1） The thermal stress mismatch between AI film and TiN film above of and under of AI film is one of reason for whisker defect, and it depend on AI sputter process ability; 2） Incoming surface status also will cause whisker defect. The paper is a mechanism study for AMEC tool AI whisker defect issue, which induced yield loss, meanwhile will give a detailed introduction for the solution of whisker defect improvement.
出处
《集成电路应用》
2018年第1期47-50,共4页
Application of IC
基金
上海市软件和集成电路产业发展专项基金(2015.150204)
关键词
集成电路制造
钝化层刻蚀
表面残留
铝晶须缺陷
开路/短路良率失效
integrated circuit manufacturing, passivation etch, wafer surface residue, AI whisker defect, Open/Short failure
