摘要
深亚微米BiCMOS[B]技术能够实现双极型与CMOS元器件兼容的工艺。为了便于集成,以双极型制程为基础,引入Twin-Well CMOS元器件工艺,在同一硅衬底上实现兼容的BiCMOS[B]工艺。采用深亚微米BiCMOS[B]集成电路芯片结构设计的工艺与制造技术,依该技术得到了芯片制程结构。
Super submicron BiCMOS[B] technology can be used to achieve the compatibility of bipolar and CMOS components. In order to facilitate integration, the Twin-Well CMOS component technology is introduced on the basis of bipolar process, and the compatible BiCMOS[B] process is implemented on the same silicon substrate. The process and manufacturing technology of the super submicron BiCMOS[B] integrated circuit chip structure design is adopted, and the chip process structure is obtained by this technology.
出处
《集成电路应用》
2018年第1期42-46,共5页
Application of IC
基金
上海市软件和集成电路产业发展专项基金(2009.090027)
