摘要
首次采用超高速电镀金刚石线切割单晶硅。通过表面分析、拉曼光谱等技术手段研究了金刚石粒度、切割线速度、切割刀数对被切割工件表面粗糙度、表面损伤深度及损伤程度的影响。发现,采用较完整晶形的金刚石,切割刀数越多,被加工工件表面凹坑深度和线痕减少越明显,进而,表面粗糙度获得提高。当随着粒度的减小,表面断裂方式发生了变化,从脆性断裂转变成塑性断裂。切割表面光滑区域以无定形硅为主,线痕明显区域检测到无定形及亚稳态硅,在凹坑内部属于晶态硅。另外,无定形和多晶硅主要取决于线的速度,线的速度越高,无定形和多晶硅越少。
Single-crystal silicon was sliced using a super-high-speed electroplated diamond wire saw for the first time.The effects of diamond grit size,wire speed,and number of slicing on the surface roughness and subsurface damage of the workpiece were investigated by surface profiling,Raman spectroscopy.It was found that the dents depth and saw marks was reduced significantly by using finer diamond grits and increasing the number of sawing,and the surface roughness was improved.A transition from brittle fracture to ductile fracture was confirmed from chip morphology observation when reducing the grit size.The subsurface damaged layers were composed of amorphous layers,dislocated layers with grain boundaries,as well as micro cracks.The smooth surface regions were dominated by amorphous silicon.While within the saw marks,a mixture of amorphous and metastable silicon phases was detected.single-crystal silicon was predominant inside the micro dents.Furthermore,the significance of silicon amorphization and poly-crystallization was strongly dependent on the wire speed.The higher the wire speed,the less amorphous and polycrystalline silicon.
出处
《超硬材料工程》
CAS
2017年第6期16-21,共6页
Superhard Material Engineering
关键词
电镀金刚石线
粗糙度
线痕
单晶硅
electroplated diamond wire
surface roughness
saw marks
single-crystalline silicon
