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一种改进型背靠背微带线-槽线过渡结构

A modified back-to-back microstrip-slot transition structure
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摘要 针对传统结构回波损耗较大的问题,提出了一种改进的背靠背微带线-槽线过渡结构。采用交叉指型槽线代替传统结构的直线槽线,并用圆环形短路终端代替扇形短路终端。当微带线开路终端扇形角度、槽线圆环短路终端宽度变化时,槽线选取直线型或者交叉指型时,利用HFSS软件分析了这些因素对过渡结构性能的影响。仿真结果表明:本文提出过渡结构的驻波比和S参数比传统结构更优;当工作频段为4.5~9.21 GHz时,S11小于-20 dB,S_(12)小于3 dB,驻波比小于1.27。 In this paper,an improved back-to-back microstrip line to line transition structure is proposed to address the problem of large return loss of classical structures. The original fan-shaped short circuit terminal is replaced by ring slot, and the cross-finger slot line is used instead of the linear slotline. The influence of these factors on the performance of the transi- tion structure was analyzed by using HFSS software when the open end fan angle of the microstrip line and the short circuit terminal width of the slot ring were changed, and slotline was linear or interdigitated. Simulation results show that the S-pa- rameters of the proposed structure and the VSWR are better than those of the classical structure ;when the operating fie- auencv is 4.5-9.21 GHz.the S11 is less than -20 dB .S, is less than 3 dB. and the VSWR is less than 1.27.
出处 《天津职业技术师范大学学报》 2017年第4期43-46,共4页 Journal of Tianjin University of Technology and Education
基金 天津市应用基础与前沿技术研究计划青年项目(14JCQNJC011) 天津职业技术师范大学预研项目(KJY14-05)
关键词 微带线-槽线 交叉指型槽线 圆环形终端 S参数 驻波比 microstrip-to-slotline interdigitated slotline circular ring terminal S-parameters VSWR
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