摘要
基于SMIC 0.18μm CMOS工艺,采用分段曲率补偿技术设计了一种低温漂带隙基准电压源。利用工作在亚阈值区的NMOS晶体管的漏电流与栅源电压的指数关系产生一个非线性补偿电流,在高温段对基准电压进行温度补偿。利用Cadence软件对基准电路进行设计和仿真。结果表明,在-40~125℃的温度范围内,文中设计的基准电路获得了3.4 ppm/℃的温度系数,在1 kHz、100 kHz、1 MHz的频率处分别获得了-78.7 dB、-54.9 dB、-32.5 dB的电源抑制比。
Based on SMIC 0. 18 μm CMOS process,a lowtemperature drift bandgap reference voltage source isdesigned by adopting piecewise curvature compensation technique. The reference voltage is compensated temperature range by non - linear compensation current,which is generated by utilizing the expontween the drain current and the gate source voltage of the NMOS transistor operating in the subthdence software is used to design and simulate the reference circuit,and the results showthat the desigcuit achieves temperature coefficient of 2. 7 ppm/℃ in the temperature range of - 40 -125 ℃,and the power supplyrejection ratio of -78.7 dB,-54.9 dB,-32.5 dBat the frequency of 1 Hz,100 kHz,1 MHz, respectively.
出处
《电子科技》
2017年第12期28-30,共3页
Electronic Science and Technology
关键词
带隙基准
分段曲率补偿
亚阈值区
bandgap reference
piecewise curvature compensation
sub - thresiiold region
