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应用于TCXO的新型五次方电压发生器的设计 被引量:1

Design of a Novel Fifth-Order Voltage Generator for TCXO
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摘要 采用VIS 0.40μm BCD工艺,设计并实现了一种带有修调技术的应用于温度补偿晶体振荡器(TCXO)的新型五次方电压发生器电路,该五次方电压发生器电路主要由五次方电压产生电路与修调电路两部分构成。其中,五次方电压产生电路采用曲线拟合技术,相较于传统的乘法器级联结构具有更高的精度;新型修调电路用来改变五次方电压发生器的系数,采用双路开关技术提高了修调结果的精度。仿真结果显示,该五次方电压发生器的最大拟合误差为1.2%。测试结果显示,采用该新型五次方电压发生器电路设计的TCXO,其频率-温度稳定度达到(±0.45)×10^(-6),相位噪声为-135 d Bc/Hz@1 kHz,芯片面积为2 782μm×2 432μm。 Based on VIS 0. 40 μm BCD technology,a novel fifth-order voltage generator circuit with trimming technique applied to temperature compensated crystal oscillator( TCXO) was designed and manufactured. The fifth-order voltage generator circuit was composed of fifth-order voltage generation circuit and trimming circuit. The fifth-order voltage generation circuit was designed with curve fitting technique,which had higher accuracy than the traditional multiplier cascade structure. The trimming circuit was used to change the coefficient of the fifth-order voltage generator,and dual switching technology improved the accuracy of the trimming results. The simulation results show that the maximum fitting error of the fifth-order voltage generator is 1. 2%. The measurement results show that the frequency-temperature stability of the TCXO which is designed with the new fifth-order voltage generator circuit is( ± 0. 45) ×10^(-6),the phase noise is -135 d Bc/Hz@ 1 kHz,and the chip size is 2 782 μm×2 432 μm.
出处 《半导体技术》 CSCD 北大核心 2017年第11期813-819,共7页 Semiconductor Technology
基金 福建省科技厅引导性项目(2015h0031) 2015年度福建省高校杰出青年科研人才培育计划资助项目 2013年福清市科技局资助项目
关键词 五次方电压发生器 温度补偿晶体振荡器(TCXO) 修调电路 频率-温度稳定度 相位噪声 fifth-order voltage generator temperature compensated crystal oscillator (TCXO) trimming circuit frequency-temperature stability phase noise
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参考文献1

  • 1吴培才等著..温度补偿晶体振荡器[M].北京:国防工业出版社,1994:271.

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