摘要
采用射频磁控溅射法,在不同的衬底温度下制备了钽(Ta)掺杂的氧化锌(ZnO)薄膜,采用X射线能谱(EDS)、X射线衍射(XRD)、扫描电镜(SEM)、紫外-可见分光光度计和光致发光(PL)光谱研究了衬底温度对制备的Ta掺杂ZnO薄膜的组分、微观结构、形貌和光学特性的影响。EDS的检测结果表明,Ta元素成功掺入到了ZnO薄膜;XRD图谱表明,掺入的Ta杂质是替代式杂质,没有破坏ZnO的六方晶格结构,随着衬底温度的升高,(002)衍射峰的强度先增大后降低,在400℃时达到最大;SEM测试表明当衬底温度较高时(400℃和500℃),Ta掺杂ZnO薄膜的晶粒明显变大;紫外-可见透过光谱显示,在可见光范围,Ta掺杂ZnO薄膜的平均透光率均高于80%,衬底不加热时制备的Ta掺杂ZnO的透光率最高;制备的Ta掺杂ZnO薄膜的禁带宽度范围为3.34~3.37 e V,衬底温度为500℃时制备的Ta掺杂ZnO薄膜的禁带宽度最小,为3.34 e V。PL光谱表明衬底温度为500℃时制备的Ta掺杂ZnO薄膜中缺陷较多,这也是造成薄膜禁带宽度变小的原因。
Ta-doped ZnO films were deposited under different substrate temperatures using radio frequency magnetron sputtering. The effects of the substrate temperature on the component, microstructure,morphology,and the optical properties of the films were investigated by energy dispersive spectrometer（ EDS）,X-ray diffractometer（ XRD）,scanning electron microscope（ SEM）,ultraviolet-visible（ UVvis） spectrophotometer,photoluminescence（ PL） spectrometer. EDS results verify that Ta elements have been doped into the ZnO films successfully. XRD patterns results show that the structures of the prepared films maintain the hexagonal wurtzite of ZnO and are not influenced by the Ta element as the substitutional impurities. The（ 002） diffraction peak intensity of Ta-doped ZnO film first increases and then decreases with the increase of substrate temperature. It reaches the maximum value at the substrate temperature of 400 ℃. SEM results show the grain size of the Ta-doped ZnO film becomes bigger whenthe substrate temperature is increased to 400 ℃ and 500 ℃. UV-vis spectra indicate that the average transmittance of the Ta-doped ZnO film is higher than 80% and the Ta-doped ZnO film deposited without heating the substrate possesses the highest transmittance in visible light range. The band gap energy of Ta-doped ZnO film extracted from the absorption edge of transmission spectra is in the range of 3. 34 ~ 3.37 e V. The minimum band gap energy of 3. 34 e V is obtained for the Ta-doped ZnO films deposited at the substrate temperature of 500 ℃. PL spectra verified that the Ta-doped ZnO film deposited at 500 ℃have more defects,which can also explain the reduction of the band gap energy.
出处
《人工晶体学报》
CSCD
北大核心
2017年第9期1714-1719,共6页
Journal of Synthetic Crystals
基金
国家自然基金项目(61504096)
天津市自然基金项目(16JCYBJC16300)
天津市科技特派员项目(16JCTPJC50800)
大学生创新创业训练计划项目(201610060029)
关键词
钽掺杂氧化锌
磁控溅射法
衬底温度
光学性能
Ta-doped ZnO
magnetron sputtering method
substrate temperature
optical property
