摘要
提出了水辅助激光诱导等离子体背部刻蚀Pyrex7740玻璃的方法,制备了缩小型十字通道微流控芯片。通过理论分析和加工试验,研究了激光能量密度和激光加工次数对平均刻蚀深度的影响,以及刻蚀过程中去离子水的作用。研究结果表明,平均刻蚀深度与激光能量密度和激光加工次数有较大关系;去离子水有助于实现持续刻蚀,制得的芯片沟槽宽度为77.8μm,刻蚀深度为20.4μm,刻蚀边缘齐整,无明显崩边现象;而在没有去离子水辅助的情况下,当激光能量密度为3.4J/cm^2时,最大刻蚀深度为2.8μm。
A method of water-assisted laser induced plasma backside etching of Pyrex7740 glass is proposed and a scaled-down cross-channel microfluidic chip is fabricated. The influences of laser energy density and laser processing times on the average etching depth, and the function of deionized water in the etching process are studied by means of theoretical analyses and processing experiments. The study results show that the average etching depth depends much on the laser energy density and the processing times. The deionized water is helpful for the realization of a continuous etching, and a chip with microgroove width of 77.8 μm, etching depth of 20.4 9m, a neat etching edge of no obvious damages is fabricated. However, in the absence of deionized water, the maximum etching depth is 2.8 μm under a laser energy density of 3.4 J/cm^2.
出处
《激光与光电子学进展》
CSCD
北大核心
2017年第10期281-286,共6页
Laser & Optoelectronics Progress
基金
国家自然科学基金(51775289)
山东省重大关键技术项目(2016ZDJS02A15)
山东省泰山学者工程专项(TS201511038)
温州市公益科技计划项目(G20170014)
