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Cu(In,Ga)Se2 absorbers prepared by electrodeposition for low-cost thin-film solar cells 被引量:1

Cu(In,Ga)Se_2 absorbers prepared by electrodeposition for low-cost thin-film solar cells
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摘要 Reducing the manufacturing cost of solar cells is necessary to their industrial production. Electrodepositing is an effective, non-vacuum method which is very suitable for cutting the manufacturing cost of thin films as well as developing its large-scale industrial production. In this study, about 1-μm-thick Cu(In,Ga)Se2(CIGS) precursors were electrodeposited on Mo/glass substrates in aqueous solution utilizing a three-electrode potentiostatic system.Triethanolamine was used as complexing agent, and all parameters of electrodeposition were precisely controlled.After that, the electrodeposited precursors were selenized in a Se atmosphere with different heating ramp rates(60 and 600℃·min^(-1)). High-quality CIGS films were obtained, and their characteristics were investigated by X-ray fluorescence, scanning electron microscopy, energydispersive spectroscopy, X-ray diffraction, Raman spectra and near-infrared-visible(NIR-Vis) spectra. The results reveal that there are many differences between the properties of the films under different heating rates. Finally,CIGS solar cells were fabricated using a fast and a slow heating rate. The maximum efficiencies achieved for the films selenized at 60 and 600℃-min^(-1) are 3.15% and 0.71%, respectively. Reducing the manufacturing cost of solar cells is necessary to their industrial production. Electrodepositing is an effective, non-vacuum method which is very suitable for cutting the manufacturing cost of thin films as well as developing its large-scale industrial production. In this study, about 1-μm-thick Cu(In,Ga)Se2(CIGS) precursors were electrodeposited on Mo/glass substrates in aqueous solution utilizing a three-electrode potentiostatic system.Triethanolamine was used as complexing agent, and all parameters of electrodeposition were precisely controlled.After that, the electrodeposited precursors were selenized in a Se atmosphere with different heating ramp rates(60 and 600℃·min^(-1)). High-quality CIGS films were obtained, and their characteristics were investigated by X-ray fluorescence, scanning electron microscopy, energydispersive spectroscopy, X-ray diffraction, Raman spectra and near-infrared-visible(NIR-Vis) spectra. The results reveal that there are many differences between the properties of the films under different heating rates. Finally,CIGS solar cells were fabricated using a fast and a slow heating rate. The maximum efficiencies achieved for the films selenized at 60 and 600℃-min^(-1) are 3.15% and 0.71%, respectively.
机构地区 College of Science
出处 《Rare Metals》 SCIE EI CAS CSCD 2017年第9期729-736,共8页 稀有金属(英文版)
基金 financially supported by the National High Technology Research and Development Program of China(No.2015AA034201) the National Natural Science Foundation of China(No.11474355) the Chinese Universities Scientific Fund(No.2017LX002)
关键词 Cu(In Ga)Se2 Thin films ELECTRODEPOSITION SELENIZATION Heating rates Cu(In,Ga)Se2 Thin films Electrodeposition Selenization Heating rates
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