期刊文献+

Mn^(2+)、Mn^(4+)共掺杂Zn_2GeO_4电子结构和光学性质的第一性原理的研究

Studies of the electronic and optical properties of Zn_2GeO_4 co-doped with Mn^(2+) and Mn^(4+) by using DFT
下载PDF
导出
摘要 利用第一性原理的局域密度近似(LDA)方法,对Zn_2GeO_4,Mn^(2+)掺杂Zn_2GeO_4,Mn^(2+)、Mn^(4+)共掺杂Zn_2GeO_4的光电性质进行了理论研究.结果表明,Mn^(2+)、Mn^(4+)掺杂可以提高Zn_2GeO_4的载流子浓度,从而改善Zn_2GeO_4的导电性.Mn^(2+)离子的掺杂导致Zn_2GeO_4对光的吸收由紫外区域扩展到可见光区域,Mn^(2+)、Mn^(4+)共掺杂促进Zn_2GeO_4晶体对可见光的吸收能力大幅增加,因此Mn^(2+)、Mn^(4+)共掺杂Zn_2GeO_4可以用于制备高效率的光催化剂和发光材料. Using the first principle of local density approximation (LDA) method, the photoelectric properties of Zn2GeO4, Mn2+ doped ZnEGeO4, Mn2+ , Mn4+ Co -doped Zn2GeO4 were studied. The results show that Mn2+ and Mn4+ doping can improve the carrier concentration of Zn2 GeO4 and enhance the conductivity of Zn2 GeO4. The doping of Mn2+ ions leads to the absorption of light from the ultraviolet region to the visible region. The Mn4+ and Mn2+ Co -doped Zn2GeO4 crystal can be used to increase the absorption capacity of Zn2GeO4. There- fore, Mn2+ and Mn4+ Co -doped ZnzGeO4 can be used to prepare high efficiency photo catalyst and luminescent materials.
出处 《原子与分子物理学报》 北大核心 2017年第4期739-744,共6页 Journal of Atomic and Molecular Physics
关键词 Mn2+ Mn4+共掺杂Zn2GeO4 第一性原理 电子结构 光学性质 Zn2GeO4 codoped with Mn2+ -Mn4+ First -principles Electronic structure Optical properties
  • 相关文献

参考文献3

二级参考文献60

  • 1Liu C Y, Ke L, Chuang Y C, et al. Study of elec- tromigration - induced Cu consumption in the flip - chip Sn/Cu solder bumps[J]. J. Appl. Phys., 2006, 100 : 083702. 被引量:1
  • 2Xu L, Pang J H L, Tu K N. Effect of electromigration -induced back stress gradient on nanoindentation marker movement in SnAgCu solder joints [ J ]. Appl. Phys. Lett. , 2006, 89(22) : 221909. 被引量:1
  • 3Xu L, Han J K, Liang J J, et al. Electromigration in- duced high fraction of compound formation in SnAgCu flip chip solder joints with copper column [ J ]. Appl. Phys. Lett. , 2008, 92(26) : 262104. 被引量:1
  • 4Lee T Y, Tu K N, Frear D R. Electromigration of eu- tectic SnPb and SnAg3.8 Cu0.7 flip chip solder bumps and under - bump metallization [ J ]. J. Appl. Phys. , 2001, 90(9) : 4502. 被引量:1
  • 5Liu C Y, Chih C, Liao C N, et al. Microstructure - eleetromigration correlation in a thin strips of eutectic SnPb solder stressed between Cu electrodes[J]. Appl. Phys. Lett. , 1999, 75(1) : 58. 被引量:1
  • 6Yamanaka K, Tsukada Y, Suganuma K. Solder elec- tromigration in Cu/In/Cu flip chip joint system[ J]. J. Alloy. Compd. , 2007, 437(1) : 186. 被引量:1
  • 7Huntington H B, Grone A R. Current -induced mark- er motion in gold wires [ J ]. J. Phys. Chem. Solids, 1961, 20(1) : 76. 被引量:1
  • 8Dyson B F, Anthony T R, Turnbull D. Interstitial dif- fusion of copper in tin[J]. J. Appl. Phys. , 2004, 38 (8) : 3408. 被引量:1
  • 9Dyson B F. Diffusion of gold and silver in tin single crystals[J]. J. Appl. Phys. , 2004, 37(6) : 2375. 被引量:1
  • 10Marlo M, Milman V. Density- functional study of bulk and surface properties of titanium nitride using different exchange - correlation functional [ J ]. Phys.Rev. B, 2000, 62(4) : 2899. 被引量:1

共引文献16

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部