1KANG H C, KARASAWA H, MIYAMOTO Y, et al. Epitaxial graphene top-gate FETs on silicon substrates. Solid-State Electronics,2010,54 (10) : 1071 - 1075. 被引量：1
2WANG W R,CHEN L,WANG Z,et al. Weak localization in few-layer graphene grown on copper foils by chemical vapor deposition. Carbon, 2012,50(14) :5242 -5246. 被引量：1
3CHAMPLAIN J G. Champlain. A physics-based, small-signal model for graphene field effect transistors. Solid-State Electronics,2012,67 ( 1 ) : 53 - 62. 被引量：1
5BRITNELL L, GORBACHEV R V,JALIL R, et al. Field-effect tunne- ling transistor based on vertical graphene heterostructures, science, 2012,335 (6071) :947 -950. 被引量：1
6CHEN B D, LIU H Z, LI X, et al. Fabrication of a graphene field effect transistor array on microchannels for ethanol sensing. Applied Surface Science,2012,258 (6) : 1971 - 1975. 被引量：1
7WANG Y J,HUANG B C,ZHANG M,et al. Optimizing the fabrication process for high performance graphene field effect transistors. Microe- lectronics Reliability,2011 ,52 (8) : 1602 - 1605. 被引量：1
8SHAHI K M F,BALANDIN A A. Thermal properties of graphene and multilayer graphene:Applications in thermal interface materials. Solid State Communications,2012,152 ( 15 ) : 1331 - 1340. 被引量：1
