摘要
We have developed a superior solar-blind ultraviolet （UV） photocathode with an AlxGa1_xrN photocathode （x ～ 0.45） in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Betbre being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition （MOCVD）, a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1_xN： Mg active layer, then followed by a comprehen- sive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.
We have developed a superior solar-blind ultraviolet （UV） photocathode with an AlxGa1_xrN photocathode （x ～ 0.45） in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Betbre being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition （MOCVD）, a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1_xN： Mg active layer, then followed by a comprehen- sive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.
基金
supported by the National Natural Science Foundation of China(Grant No.10974015)
the National Defense Pre-Research Foundation of China(Grant No.9140C380502150C38002)
