摘要
We report on the resonance fluorescence （RF） from single InAs quantum dots （QDs） emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser scattering. An ultra-weak He-Ne laser is necessary to be used as a gate laser for obtaining RE Rabi oscillation with more than one period is observed through the picosecond （ps） pulsed laser excitation. The resonant control of exciton opens up new possibilities for realizing the on-demand single photon emission and quantum manipulation of solid-state qubits at telecom band.
We report on the resonance fluorescence （RF） from single InAs quantum dots （QDs） emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser scattering. An ultra-weak He-Ne laser is necessary to be used as a gate laser for obtaining RE Rabi oscillation with more than one period is observed through the picosecond （ps） pulsed laser excitation. The resonant control of exciton opens up new possibilities for realizing the on-demand single photon emission and quantum manipulation of solid-state qubits at telecom band.
基金
supported by the National Basic Research Program,China(Grant No.2013CB922304)
the National Key Research and Development Program of China(Grant No.2016YFA0301202)
the National Natural Science Foundation of China(Grant Nos.11474275,61674135,and 91536101)
