摘要
通过设计用于MOCVD的多种Pocket规格的2"-54片的SiC涂层石墨基座,进行LED外延生长得出Pocket台阶高度、Pocket底部形状与波长的关系,从而设计合适规格的量产SiC涂层石墨基座。
Through the design of SiC coated graphite susceptor muhiple Pocket specifications MOCVD 2 ＂ -54,make sure the relationship between pocket step height,pocket bottom shape and wavelength by LED epitaxy. So as to design the appropriate specifications of SiC coated graphite susceptor for LED epitaxy.
出处
《炭素》
2017年第2期30-34,共5页
Carbon
