摘要
针对硅通孔(through-silicon via,TSV)背面通孔外露工艺复杂度与成本较高、易遗留工艺隐患的问题,提出一种改进的穿硅电容(through-silicon capacitor,TSC)三维互连技术。首先,介绍TSC结构特点与工艺制作方法。其次,通过电磁仿真分析TSC互连电容耦合特性,结合传统收发电路与HSPICE仿真验证TSC互连在高频信号传输应用中的可行性。分析与仿真结果显示:TSC省去TSV背面通孔外露工艺可进一步降低成本及复杂工艺引入的可靠性隐患。采用孔半径2.5μm、孔高50μm单根TSC通道可实现15 Gbps高频信号传输,功耗约为0.045 mW/Gbps。研究表明,TSC互连是一种高可靠、低成本的三维互连结构,为实现高频三维集成电路(3D IC)提供一种可行的互连技术方案。
To overcome high complexity,high cost and hidden trouble caused by the backside via reveal process of through-silicon via（TSV）,an improved 3D interconnection technology called through-silicon capacitor（TSC）was proposed.The structural feature and fabrication process of TSC were introduced firstly.Then,the capacitive coupling characteristic of the TSC interconnection was analyzed by the electromagnetic simulation.Based on the traditional transceiver circuit,the feasibility of high frequency signal transmission for the TSC interconnection was verified by the HSPICE simulation.The results of analysis and simulation indicate that without the adoption of TSV backside via reveal process,the cost and hidden trouble of the TSC can be further reduced.A TSC channel with the radius of 2.5μm and height of 50μm can achieve the high frequency signal transmission of 15 Gbps and the power consumption of about 0.045 mW/Gbps.The researches show that the TSC interconnection is a 3D interconnection structure with high reliability and low cost,and provides a feasible interconnection technology for high frequency 3D ICs.
作者
刘松
单光宝
Liu Song Shan Guangbao(Xi′an Microelectronics Technology Institute,Xi＇an 710068, China)
出处
《微纳电子技术》
北大核心
2017年第8期558-564,共7页
Micronanoelectronic Technology
基金
航天先进制造技术研究联合基金资助项目(U1537208)
关键词
三维集成电路(3D
IC)
三维互连
硅通孔(TSV)
电容耦合互连(CCI)
硅通孔(TSV)背面通孔外露工艺
three-dimensional integrated circuit（3D IC）
three-dimensional interconnection
through-silicon via（TSV）
capacitive coupling interconnection（CCI）
through-silicon via（TSV）backside via reveal process
