摘要
采用连续离子层吸附法,以ZnO纳米棒阵列为模板,将窄带CdS和更窄带层状MoS_2依次包覆在ZnO纳米棒表面,得到一种ZnO/CdS/MoS_2异质结纳米棒阵列.利用X射线衍射、扫描电子显微镜、高分辨透射电子显微镜和拉曼光谱对产物进行了表征.结果表明,CdS鞘和MoS_2鞘依次均匀地包覆在垂直生长的ZnO纳米棒上,且结合过程中未明显影响内芯ZnO的棒状结构.在异质结结构中,ZnO/CdS界面、CdS/MoS_2界面接触良好且晶格失配率低.此外,一维ZnO纳米棒阵列的存在也抑制了MoS_2在c轴方向上的堆积,使包覆在纳米棒上的MoS_2以少层的形式存在.原位电输运特性表明,与ZnO纳米棒和ZnO/CdS异质结纳米棒相比,ZnO/CdS/MoS_2异质结纳米棒则呈现出了更优的电学特性.
ZnO nanorod arrays were fabricated as a template,which were coated with CdS with narrow bandgap and few-layer MoS2 with a narrower bandgap by the successive ionic layer adsorption and reaction（SILAR）method,respectively.The ZnO/CdS/MoS2 heterostructure nanorods arrays were obtained.The samples were characterized by X-ray powder diffraction,scanning electron microscope,high resolution transmission electron microscope and Raman spectrum.The results show that CdS and MoS2 are attached to the vertically grown ZnO nanorods uniformly,and ZnO remains to be nanorods arrays.Meanwhile,ZnO/CdS and CdS/MoS2 keep good contact interfaces and have small lattice mismatches.In addition,the existence of ZnO nanorod arrays prevents the restacking of MoS2 nanosheets along c axis,which makes MoS2few-layer flakes.The I-V curves of the in-situ measurements show that ZnO/CdS/MoS2 heterostructure nanorods present better electrical properties than ZnO nanorods and ZnO/CdS heterostructure nanorods.
出处
《东华大学学报（自然科学版）》
CSCD
北大核心
2017年第2期286-292,共7页
Journal of Donghua University(Natural Science)
基金
国家自然科学基金资助项目(11174049
61376017)
