摘要
基于RC-CR多相网络技术研制了一款S波段镜频抑制接收机单片微波集成电路(MMIC),在MMIC芯片上集成S波段低噪声放大器(LNA)、差分IQ混频器、本振(LO)驱动放大器、RC-CR多相网络滤波器等电路单元,实现了S波段单片镜频抑制接收机,解决了镜频接收机小型化的问题。电路、电磁场软件仿真以及采用Ga As赝配高电子迁移率晶体管(PHEMT)工艺流片后的结果表明,在S波段实现了噪声系数小于1.8 dB,增益大于12 dB,中频(150±5)MHz带内镜频抑制大于35 dBc的技术指标。MMIC的芯片尺寸为4.8 mm×2.5 mm×0.07 mm。此镜频抑制接收机MMIC具有指标优异、体积小、集成度高的特点,可广泛用于各种需小型化的相控阵雷达和通信系统中。
An S-band image rejection receiver monolithic microwave integrated circuit （MMIC） was developed based on the RC-CR poly-phase network technology, with an S-band low noise amplifier （LNA）, a differential IQ frequency mixer, a local oscillator （LO） -drived amplifier, an RC-CR poly- phase network filter and other circuit units integrated on the MMIC chip. The S-band image rejection receiver on a chip was realized and the size miniaturization problem of the image rejection receiver was solved. The results of the circuit and electromagnetic field software simulation and the fabrication with the GaAs pseudomorphic high electron mobility transistor （PHEMT） process show that the noise figure is less than 1.8 dB in the S band, the gain is larger than 12 dB, and the image rejection is larger than 35 dBc in the intermediate frequency bandwidth of （150±5） MHz. The chip size of the MMIC is 4.8 mm×2.5 mm×0.07 mm. The image rejection receiver MMIC features excellent specifications, small size and high integration, and can be widely applied in various phased array radars and communication systems that require size miniaturization.
出处
《半导体技术》
CSCD
北大核心
2017年第7期499-504,共6页
Semiconductor Technology
