摘要
以SnO陶瓷为靶材,采用脉冲激光沉积法(PLD),在厚度为330 nm的r面蓝宝石衬底上制备厚度约为270 nm的单相SnO外延薄膜,并通过改变衬底温度,系统地研究生长温度对薄膜结构及光学性质的影响.X线衍射(XRD)测试表明,在衬底温度小于或等于575℃时,成功制备出单相的SnO外延薄膜.薄膜与衬底蓝宝石的外延关系为:SnO(001)∥Al_2O_3(1-102),SnO[110]∥Al_2O_3[-12-10].而当温度大于575℃时,由于歧化反应:(1+x)SnO→xSn+SnO_(1+x),得到的SnO薄膜中存在少量的金属Sn相、Sn_3O_4及SnO_2相.透射光谱显示,样品在可见光区的透过率高达80%.薄膜的光学带隙随温度的增加呈现V字型变化趋势.衬底温度小于或等于575℃时,薄膜的光学带隙随温度的升高而减小;当生长温度大于575℃时,由于SnO_2的出现导致薄膜的带隙随温度升高而变大.
Epitaxial SnO thin films with deepth of 270 nmwere deposited on r-plane sapphire substrates with deepth of 330 nm by pulsed laser deposition （ PLD）. The growth experiments were carried out in the substrate temperature range of 425-725 ℃. The effects of the substrate temperature on the structure, morphology and the optical properties of deposited SnO films were studied. X-ray diffraction（XRD） revealed that the films deposited at temperatures equal to or lower than 575 ^ consisted of pure-phase SnO and showed an epitaxial relationship with the substrate of SnO（001） / Al2O 3 （1 - 102 ） and SnO [ 110 ] / A l2O 3 [ - 12 - 10]. However,when deposited temperatures were above 575 T!,SnO coexisted with Sn,SnO2 and Sn3O4 in the films. The average transmittance of SnO samples was up to 80% in the visible and infrared spectral regions. The obtained films had optical band gaps between 2. 77 and 3.20 eV depending on the deposition temperature.
出处
《湖北大学学报（自然科学版）》
CAS
2017年第3期227-230,共4页
Journal of Hubei University：Natural Science
基金
国家自然科学基金(51572073,61274010,11574074)
湖北省自然科学基金(2015CFA038,2015CFB265,2016AAA031)资助
