摘要
采用四线法研究Ag/Si O2/p-Si∶B/Si O2/Ag器件在不同温度下的电输运性能(V-I特性),在低温V-I特性曲线中观察到了明显的热滞现象.为了消除热滞现象带来的实验误差,文中提出了采用增强系统热传导以及延长连续两次测量的间隔时间的方法,并通过延长连续两次测量时间间隔的方式消除了热滞对器件电输运性能的影响.结果表明,在进行半导体基材料的电性能及磁阻效应的研究时,必须考虑热效应可能带来的影响,否则将导致错误的实验结果.
In this paper, the electrical transport properties （ V-I characteristics） of Ag/SiO2/p-Si ： B/SiO2/Ag device at different temperatures are investigated by means of four-wire method, finding that an obvious thermal hys-teresis phenomenon occurs in V-I curves at low temperatures. In order to eliminate the experimental errors caused by the thermal hysteresis, two methods of prolonging the interval between two consecutive measurements and improving the heat conduction ability of system are proposed, and the first method is used to remove the effects of the thermal hysteresis on the electrical transport properties of the device. The results show that when the electrical properties and magnetoresistance effects of semiconductor-based materials are investigated, the thermal hysteresis phenomenon should be treated carefully, otherwise it may lead to erroneous results.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2017年第1期48-52,共5页
Journal of South China University of Technology(Natural Science Edition)
基金
国家自然科学基金资助项目(11574243
11174231)~~
关键词
热滞
电性能
硅基半导体
thermal hysteresis
electrical properties
silicon-based semiconductor
