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三维封装中的并行键合线信号仿真分析 被引量:2

The Simulation Analysis of Parallel Bonding Wire Signal in a 3D System-in-Package
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摘要 当今便携式设备的速率可达数吉比特每秒,但是其通道的频宽限制其性能。在所有芯片与基板的传输结构中键合线是最常用的,但却渐渐成为了带宽主要的限制。基于一款高密度布线系统级封装的研发项目,使用全波电磁场仿真工具进行建模分析,研究了不同参数对键合传输线DDR单端信号与差分信号传输质量的影响。最终通过键合线设计的优化,仿真结果通过了眼图的验证。 Today's portable electrical devices can run at gigabits per second (Gbps), but the bandwidth of the channel limits its performance. Among all the transmission structures between the chips and substrates, the bonding wire is the most commonly used, but it is becoming a major bandwidth constraint. This paper is based on the research and development project of high-density wiring System-in-Package. Modeling analysis is conducted with the full-wave electromagnetic field simulation tools to research the influences of different parameters on DDR single-ended and differential signal transmission quality of the bonding wire transmission line. Finally, through the optimization of bonding wire design, the simulation results were verified by eye diagram.
出处 《电子与封装》 2017年第3期13-18,共6页 Electronics & Packaging
关键词 键合线 系统级封装 DDR 单端信号 差分信号 bonding wire System-in-Package DDR single-ended signal differential signal
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  • 1周燕,孙玲,景为平.IC封装中引线键合互连特性分析[J].中国集成电路,2006,15(11):55-57. 被引量:5
  • 2伍隽,杨邦朝.IC封装材料市场发展分析[J].电子与封装,2002,2(3):7-9. 被引量:4
  • 3陈新,李军辉,谭建平.芯片封装中铜线焊接性能分析[J].贵金属,2004,25(4):52-57. 被引量:5
  • 4曾耿华,唐高弟.微波多芯片组件中键合线的参数提取和优化[J].信息与电子工程,2007,5(1):40-43. 被引量:14
  • 5中国电子学会生产技术学分会丛书编委会.微电子封装技术[M].中国科学技术大学出版社,2003.. 被引量:12
  • 6L Ainouz.The Use of Copper Wire as an Alternative Interconnection Material in Advanced Semiconductor Packaging[P].Source from http://www.Kns.corn/news.html. 被引量:1
  • 7Hyoung-Joon Kim,Joo Yeon Lee,Kyung-Wook Paik,et al.Effects of Cu/Al intermetallic compound (IMC) on copper wire and aluminum pad bondability[J].IEEE Trancactions on Components and Packaging Technologies,2003,26,(2):. 被引量:1
  • 8Larbi Ainouz,Muller Feindraht AG,Thalwil.The use of copper wire as an alternative interconnection material in advanced semiconductor packaging.KnS Report,Issue 11,Number 2,1999. 被引量:1
  • 9L NOtzli,H Berchtold,F Van Mulken.Copper wire ultra fine pitch bonding -the natural progression in IC assembly techn-ology[P].http://www.smallprecisiontools.com. 被引量:1
  • 10Chen Hua,Lee S W R and Ding Yutian.Evaluation of Bondability and Reliability of Single Crystal Copper Wire Bonding Proc[A].7th IEEE CPMT Conference on High Density Microsystem Design,Packaging and Failure Analysis (HDP'05)[C].Shanghai,China,27-30 June,2005. 被引量:1

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