摘要
集成电路光刻工艺中,由于静电造成晶圆缺陷、电学失效或者低良率的情况时有发生。这是一种低成本的工艺方法(低功率等离子体轰击),释放积聚在晶圆表面的静电,主要研究了静电产生的机制、降低静电损伤的效果和内在机制。
The wafer surface electrostatic charge accumulated within lithography process will bring defects, electrical failures and low yield. Here we provide a low cost process （low power plasma shower） to eliminate the accumulated charges at wafer surface. The inner mechanism of the charges＇ generation and recombination are studied.
出处
《集成电路应用》
2017年第3期53-55,共3页
Application of IC
关键词
光刻
静电
工艺导致的损伤
等离子体
lithography, electrostatic discharge, process induced damage, plasma
