摘要
We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using compositionally graded GaAsxSb1-x buffer layers. Optimization of GaAsxSb1-x growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of GaAsxSb1-x layers are found to be 420 degrees C and 0.5 mu m, respectively. The smallest full width at half maximum value and the root mean square surface roughness of 0.67nm over 2 x 2 mu m(2) area are achieved as a 250nm GaSb film is grown under optimized conditions.
We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using compositionally graded GaAsxSb1-x buffer layers. Optimization of GaAsxSb1-x growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of GaAsxSb1-x layers are found to be 420 degrees C and 0.5 mu m, respectively. The smallest full width at half maximum value and the root mean square surface roughness of 0.67nm over 2 x 2 mu m(2) area are achieved as a 250nm GaSb film is grown under optimized conditions.
基金
Supported by the National Basic Research Program of China under Grant Nos 2015CB351902,2015CB932402 and 2012CB619203
the National Natural Science Foundation of China under Grant Nos 61177070,11374295 and U1431231
the National Key Research Program of China under Grant No 2011ZX01015-001
