摘要
为了了解热处理工艺对单晶硅片残余应力的影响,选取了PHOS-5和BORON-9两种材料的五吋单晶硅片试样,通过切割法研究同种材料在扩散炉内不同位置以及低温热处理温度改变后硅片内残余应力的变化情况。研究表明:硅片中的最大残余应力普遍存在于单晶硅片的边缘部分,硅片在炉内位置的变化并不能明显改变硅片的残余应力;在炉内最高温度相同的情况下,当低温热处理温度不同时,单晶硅片中残余应力的释放也不同,从而引起硅片内的最大残余应力有明显的改变。
In order to investigate the effect on residual stress of silicon chip of different heat treatment process,two kinds of five inches chip sample of PHOS-5and BORON-9 materials were selected,and the influence rules of residual stress were measured by cutting method with different positions in the silicon furnace and heat treatment temperature.It is showed that the maximum residual stress commonly exists in the edge portion of each silicon chip,and the different furnace position does not significantly change the residual stress of silicon chip.At the same time,the release of residual stress in the samples is different with the different low heat treatment temperature under the condition of same highest temperature in the furnace,thus causes the obvious fluctuations of maximum residual stress in the silicon chips.
出处
《机械工程与自动化》
2017年第2期14-15,17,共3页
Mechanical Engineering & Automation
基金
2014年扬州市科技计划项目(yz2014088)
关键词
单晶硅片
切割法
残余应力
低温热处理
silicon chip
cutting method
residual stress
heat treatment
