摘要
石墨烯独特的二元化电子价键结构使其在纳米电子器件中具有良好的应用前景。拉曼光谱作为一种灵敏、便捷的技术,已被成功用于表征石墨烯的结构和特性。本文主要介绍对沉积在不同基底以及掺杂的石墨烯所进行的拉曼光谱研究。通过对铟锡氧化物、蓝宝石和玻璃基底上石墨烯的拉曼光谱的观察,发现在不同基底上的石墨烯拉曼G峰与2D峰会有不同程度的位移,但2D峰峰值可判断石墨烯层数这一结论仍适用。掺杂可改变石墨烯的荷电状态,使石墨烯表现出空穴(p)型或电子(n)型掺杂特性,通过石墨烯拉曼光谱的变化可以定性石墨烯的掺杂类别并定量表征石墨烯的载流子浓度。
Graphene have good application prospect in nano-electronic devices for its unique normalize electronic valence bond structure.Raman spectroscopy,as a sensitive and convenient technology,has been used for characterizing the structures and properties of graphene successfully.This paper mainly introduces the Raman spectra research on graphene with different doping state or deposited on different substrates.Although the G band and 2D band of Raman spectra has deviation in different degree on various substrates,by observing Raman spectroscopies of graphene on indium tin oxide,sapphire,and glass substrate,the conclusion that the intensity of 2D band can determine the layer of graphene is still applicable.Doping can change the charged state of graphene and make graphene show hole type（p） or electronic（n） doped features.The doping type of graphene can be described qualitatively,as well as the carrier concentration of graphene can be quantitatively determined by analyzing the changes of graphene Raman spectroscopy.
出处
《化学通报》
CAS
CSCD
北大核心
2017年第3期236-240,245,共6页
Chemistry
基金
北京市科技计划项目(Z151100003515003)
北京市教委科研计划项目(KM201410005015)
中国标准化研究院院长基金项目(222016Y-4504
222016Y-4505)资助
关键词
石墨烯
基底
掺杂
Graphene Substrate Doping
