摘要
用原子力显微镜等方法研究了在InSb(001)衬底和(001)偏(111)B面2°衬底上分子束外延生长的同质外延薄膜和掺Al薄膜样品表面的微观形貌。对比了不同衬底同质外延时生长模式的差异,并观察了加入Al后引入的交叉影线,分析了其产生的原因。研究表明,使用有偏角的衬底更有利于减少分子束外延薄膜的表面缺陷。
The microtopography of homoepitaxial and Al-doped thin films grown on InSb （001）substrates and （001） misoriented by 2° （ 111）B substrates by Molecular Beam Epitaxy （MBE） was studied by Atomic Force Microscopy （AFM）. The differences of the growing modes of homoepitaxial films on different substrates were compared. The crosshatch introduced after A1 was added into InSb films was observed and its cause was analyzed. The research showed that the use of misoriented substrates was more favorable to the reduction of surface defects of InSb films grown by MBE.
出处
《红外》
CAS
2017年第2期7-10,共4页
Infrared
